Model/Brand/Package
Category/Description
Inventory
Price
Data
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Category: transistorDescription: PDTA143ZT - PNP resistor-equipped transistors; R1 = 4.7K, R2 = 47K5094 -
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Category: transistorDescription: Transistor: NPN; bipolar; Darlington; 45V; 1A; 1.3W; SOT89-343805+$3.501925+$3.242550+$3.0609100+$2.9831500+$2.93122500+$2.86645000+$2.840410000+$2.8015 -
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Category: transistorDescription: Low saturation voltage NPN transistor, NXP series of NXP BISS (major breakthrough in small signal) low saturation voltage NPN bipolar junction transistors. These devices have extremely low collector emitter saturation voltage and high collector current capacity, and are packaged in a compact space saving form factor. These transistors reduce losses and can reduce heat generation and overall improve efficiency when used for switching and digital applications. ###Bipolar transistor, NXP Semiconductors79485+$2.903925+$2.688850+$2.5382100+$2.4737500+$2.43062500+$2.37695000+$2.355310000+$2.3231 -
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Category: transistorDescription: Radio frequency metal oxide semiconductor field-effect transistor (RF MOSFET) HV8 2.1GHZ 48W NI1230HS96281+$428.413010+$417.237050+$408.6687100+$405.6884200+$403.4532500+$400.47301000+$398.61032000+$396.7476 -
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Category: transistorDescription: W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170MHz, 28W Avg., 28V64931+$432.416110+$421.135750+$412.4874100+$409.4792200+$407.2232500+$404.21511000+$402.33502000+$400.4549 -
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Category: transistorDescription: TRANS RET TAPE-7626420+$0.087850+$0.0813100+$0.0780300+$0.0754500+$0.07351000+$0.07225000+$0.070910000+$0.0696 -
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Category: transistorDescription: Trans GP BJT PNP 100V 4.1A 4Pin(3+Tab) SOT-223 T/R86355+$1.861725+$1.723850+$1.6272100+$1.5859500+$1.55832500+$1.52385000+$1.510010000+$1.4893 -
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Category: transistorDescription: IC NX6020NBKS SC-88257910+$1.028750+$0.9754100+$0.9373300+$0.9144500+$0.89151000+$0.86872500+$0.83445000+$0.8268 -
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Category: transistorDescription: Radio frequency metal oxide semiconductor field-effect transistor (RF MOSFET) VHV6 600W NI1230S 50V4655 -
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Category: transistorDescription: RF Power Transistor,1.8 to 600MHz, 600W, Typ Gain in dB is 24 @ 98MHz, 50V, LDMOS, SOT182571331+$1368.107410+$1355.670125+$1349.451450+$1343.2327100+$1337.0141150+$1330.7954250+$1324.5767500+$1318.3580 -
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Category: transistorDescription: MOSFET RF N-CH 40W 28V NI-780S51871+$944.211810+$911.081650+$906.9403100+$902.7990150+$896.1730250+$890.3752500+$884.57741000+$877.9514 -
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Category: transistorDescription: MOSFET RF N-CHAN 28V 35W NI-78041341+$467.484210+$455.289050+$445.9393100+$442.6872200+$440.2482500+$436.99611000+$434.96362000+$432.9310 -
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Category: transistorDescription: Radio frequency metal oxide semiconductor field-effect transistor (RF MOSFET) HV6E 900MHz 160W NI780HS3335 -
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Category: transistorDescription: FET RF 65V 880MHz NI-780S71901+$53.139510+$50.0906100+$47.8256250+$47.4771500+$47.12871000+$46.73672500+$46.38825000+$46.1704
